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| Quantity | Price |
|---|---|
| 1+ | $0.620 |
| 10+ | $0.584 |
| 100+ | $0.541 |
| 500+ | $0.516 |
| 1000+ | $0.494 |
| 2500+ | $0.486 |
| 12000+ | $0.482 |
Price for:Each
Minimum: 1
Multiple: 1
$0.62
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN3310A
Newark Part No.98K4102
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id200mA
On Resistance Rds(on)10ohm
Drain Source On State Resistance10ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Power Dissipation Pd625mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10Ω resistance and 625mW power dissipation.
Applications
Power Management, Motor Drive & Control, Audio, Automotive
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
10ohm
Transistor Case Style
TO-226AA
Power Dissipation Pd
625mW
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source On State Resistance
10ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability