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ManufacturerINFINEON
Manufacturer Part NoBSZ900N20NS3GATMA1
Newark Part No.79X1341
Also Known AsBSZ900N20NS3 G, SP000781806
Technical Datasheet
Packaging Options
19 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $1.900 |
| 10+ | $1.110 |
| 25+ | $1.050 |
| 50+ | $0.981 |
| 100+ | $0.918 |
| 250+ | $0.835 |
| 500+ | $0.751 |
| 1000+ | $0.699 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.90
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ900N20NS3GATMA1
Newark Part No.79X1341
Also Known AsBSZ900N20NS3 G, SP000781806
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id15.2A
On Resistance Rds(on)0.077ohm
Drain Source On State Resistance0.09ohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd62.5W
Gate Source Threshold Voltage Max3V
Power Dissipation62.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSZ900N20NS3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM and MSL 1 rated
- Highest efficiency
- Highest power density
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Applications
Industrial, Audio, LED Lighting, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.077ohm
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
15.2A
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
62.5W
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate