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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTK140N20P
Newark Part No.58M7654
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $18.120 |
| 10+ | $15.730 |
| 25+ | $13.320 |
| 50+ | $12.840 |
| 100+ | $12.360 |
| 250+ | $12.270 |
| 500+ | $12.180 |
Price for:Each
Minimum: 1
Multiple: 1
$18.12
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTK140N20P
Newark Part No.58M7654
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id140A
Drain Source On State Resistance0.018ohm
On Resistance Rds(on)0.018ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage15V
Power Dissipation Pd800W
Gate Source Threshold Voltage Max5V
Power Dissipation800W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXTK140N20P is a Polar™ single N-channel enhancement-mode Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
- International standard packages
- Unclamped inductive switching (UIS) rating
- Low package inductance - Easy to drive and to protect
- Easy to mount
- Space saving
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
140A
On Resistance Rds(on)
0.018ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
800W
Power Dissipation
800W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.018ohm
Transistor Case Style
TO-264
Rds(on) Test Voltage
15V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability