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FDD8445
MOSFET, N, D-PAK
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
125 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.130 |
| 10+ | $0.845 |
| 25+ | $0.806 |
| 50+ | $0.768 |
| 100+ | $0.730 |
| 250+ | $0.666 |
| 500+ | $0.602 |
| 1000+ | $0.559 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.65
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8445
Newark Part No.04M9088
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id15.2A
On Resistance Rds(on)0.0067ohm
Drain Source On State Resistance8700µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd79W
Gate Source Threshold Voltage Max2.8V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDD8445 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15.2A
Drain Source On State Resistance
8700µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
79W
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0067ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability