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STFW69N65M5
MOSFET, N-CH, 650V, 58A, 150DEG C, 79W ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTFW69N65M5
Newark Part No.69AH2709
Product RangeMDmesh V
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
| Quantity | Price |
|---|---|
| 1+ | $16.260 |
| 10+ | $9.300 |
| 25+ | $9.130 |
| 60+ | $8.990 |
| 120+ | $8.860 |
Price for:Each
Minimum: 1
Multiple: 1
$16.26
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTFW69N65M5
Newark Part No.69AH2709
Product RangeMDmesh V
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id58A
On Resistance Rds(on)0.037ohm
Drain Source On State Resistance0.037ohm
Transistor Case StyleTO-3PF
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation79W
Power Dissipation Pd79W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh V
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.037ohm
Transistor Case Style
TO-3PF
Rds(on) Test Voltage
10V
Power Dissipation
79W
No. of Pins
3Pins
Product Range
MDmesh V
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
58A
Drain Source On State Resistance
0.037ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
79W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability