DG308BDY-T1-E3

DG308BDY-T1-E3 is an improved quad CMOS analogue switch. This device is fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This quad single-pole single-throw switch is designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. It can handle upto ±22V input signals. An epitaxial layer prevents latchup. The device features true bi-directional performance in the on condition and will block signals to the supply levels in the off condition. The DG308B is a normally open switch. It is also used in applications such as industrial instrumentation, test equipment, communications systems, disk drives, computer peripherals, portable instruments, and sample-and-hold circuits.

• Wide analogue signal range, simple logic interface, higher accuracy
• Minimum transients, reduced power consumption
• CMOS compatible logic, ±22V supply voltage rating
• Drain-source on-resistance is 45 ohm typical at (VD = ±10V, IS = 1mA)
• Source off leakage current is ±0.01nA typical at (VS = ±14V, VD = ±14V)
• Turn-on time is 200ns typical at (VS = 3V), turn-off time is 150ns typical at (VS = 3V)
• Charge injection is 1pC typical at (CL = 1000pF, Vg = 0V, Rg = 0 ohm)
• Off-isolation is 90dB typical at (CL = 15pF, RL = 50 ohm, VS = 1VRMS, f = 100KHz)
• Positive supply current is 1µA max at (VIN = 0V or 15V)
• Operating temperature range from -40°C to 85°C, 16-pin narrow SOIC package