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SI1302DL-T1-E3
Power MOSFET, N Channel, 30 V, 640 mA, 0.48 ohm, SC-70, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-E3
Newark Part No.65K1914
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id640mA
On Resistance Rds(on)0.41ohm
Drain Source On State Resistance0.48ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd310mW
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max3V
Power Dissipation310mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1302DL-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
310mW
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
640mA
Drain Source On State Resistance
0.48ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SC-70
Power Dissipation
310mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate