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SI2325DS-T1-E3
Power MOSFET, P Channel, 150 V, 690 mA, 1.2 ohm, TO-236, Surface Mount
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| Quantity | Price |
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| 25+ | $0.536 |
| 50+ | $0.536 |
| 100+ | $0.492 |
| 250+ | $0.492 |
| 500+ | $0.453 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2325DS-T1-E3
Newark Part No.43K8583
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id690mA
On Resistance Rds(on)1.3ohm
Drain Source On State Resistance1.2ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage6V
Power Dissipation Pd750mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max4.5V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2325DS-T1-E3 is a 150VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp circuits in DC-to-DC power supplies.
- Ultra-low ON-resistance
- Small size
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
750mW
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
690mA
Drain Source On State Resistance
1.2ohm
Rds(on) Test Voltage
6V
Transistor Case Style
TO-236
Power Dissipation
750mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability