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SI4425DDY-T1-GE3
Power MOSFET, P Channel, 30 V, 19.7 A, 0.0098 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.030 |
| 10+ | $0.994 |
| 25+ | $0.920 |
| 50+ | $0.846 |
| 100+ | $0.772 |
| 500+ | $0.660 |
| 1000+ | $0.609 |
| 2500+ | $0.562 |
Price for:Each
Minimum: 1
Multiple: 1
$1.03
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4425DDY-T1-GE3
Newark Part No.55R1922
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19.7A
On Resistance Rds(on)0.0081ohm
Drain Source On State Resistance0.0098ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5.7W
Gate Source Threshold Voltage Max1.2V
Power Dissipation5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The SI4425DDY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
19.7A
Drain Source On State Resistance
0.0098ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.7W
Power Dissipation
5.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0081ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability