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Quantity | Price |
---|---|
1+ | $1.460 |
10+ | $1.070 |
25+ | $1.060 |
50+ | $0.961 |
100+ | $0.860 |
250+ | $0.802 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$7.30
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4825DDY-T1-GE3
Newark Part No.23T8516
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id14.9A
Drain Source On State Resistance0.0125ohm
On Resistance Rds(on)0.01ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.7W
Gate Source Threshold Voltage Max1.4V
Power Dissipation2.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4825DDY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and notebook adaptor switch applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
14.9A
On Resistance Rds(on)
0.01ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.7W
Power Dissipation
2.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0125ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability