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SI4900DY-T1-GE3
Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4900DY-T1-GE3
Newark Part No.26R1893
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.046ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (10-Jun-2022)
Product Overview
The SI4900DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for LCD TV CCFL inverter applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.046ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate