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SI6968BEDQ-T1-E3
Dual MOSFET, Dual N Channel, 20 V, 5.2 A, 2.2 mohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.449 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,347.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6968BEDQ-T1-E3
Newark Part No.06J8126
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id5.2A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel5.2A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel2.2mohm
Drain Source On State Resistance P Channel-
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI6968BEDQ-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package.
- Common drain configuration
- ESD protected device
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
5.2A
Drain Source On State Resistance N Channel
2.2mohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate