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Available to Order
Manufacturer Standard Lead Time: 59 week(s)
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHS36N50D-E3
Newark Part No.63W4117
Product RangeD
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id36A
Drain Source On State Resistance0.105ohm
On Resistance Rds(on)0.105ohm
Transistor Case StyleTO-274AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation446W
Power Dissipation Pd446W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeD
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
- D series N-channel enhancement-mode power MOSFET
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
- Optimal efficiency
- Fast switching
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.105ohm
Transistor Case Style
TO-274AA
Rds(on) Test Voltage
10V
Power Dissipation
446W
No. of Pins
3Pins
Product Range
D
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
36A
On Resistance Rds(on)
0.105ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
446W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate