6EDL04I06NTXUMA1

6EDL04I06NTXUMA1 is a 2nd generation full bridge, gate driver to control power devices like MOS-transistor or IGBT in 3-phase systems with a maximum blocking voltage of +600V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperature and voltage conditions. The six independent drivers are controlled at the low side using CMOS resp. LSTTL compatible signals, down to 3.3V logic. The device includes an under-voltage detection unit with hysteresis characteristics and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Potential application includes home appliance, refrigeration compressors, air-conditioning, fans, pumps, motor drives, general-purpose inverters, power tools, and light electric vehicles.

• Negative logic high side control input HIN1,2,3 and LIN1,2,3
• IGBT target transistor, 11.7V / 9.8V typ UVLO thresholds, bootstrap diode
• High side offset voltage is 620V max (Ta=25°C), output source/sink current +0.165A/-0.375A
• Integrated ultra-fast, low RDS(ON) bootstrap diode, signal interlocking of every phase
• Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI technology
• Separate control circuits for all six drivers, detection of over current and under voltage supply
• Externally programmable delay for fault clear after over current detection
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• DSO-28 package, ambient temperature range from -40 to 105°C