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Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002W-7-F
Newark Part No.25R5685
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source On State Resistance13.5ohm
On Resistance Rds(on)13.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd200mW
Gate Source Threshold Voltage Max2V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002W-7-F is a N-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
- Halogen-free, Green device
- Qualified to AEC-Q101 standards for high reliability
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
Applications
Power Management, Defence, Military & Aerospace, Automotive
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
13.5ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
200mW
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate