Print Page
FQP13N06L
Power MOSFET, N Channel, 60 V, 13.6 A, 0.088 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP13N06L
Newark Part No.31Y1544
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id13.6A
Drain Source On State Resistance0.088ohm
On Resistance Rds(on)0.088ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd45W
Gate Source Threshold Voltage Max2.5V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The FQP13N06L is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.088ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
13.6A
On Resistance Rds(on)
0.088ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
45W
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate