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BSC190N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 50 A, 0.016 ohm, PG-TDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSC190N15NS3GATMA1
Newark Part No.79X1336
Also Known AsBSC190N15NS3 G, SP000416636
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC190N15NS3GATMA1
Newark Part No.79X1336
Also Known AsBSC190N15NS3 G, SP000416636
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id50A
On Resistance Rds(on)0.016ohm
Drain Source On State Resistance0.016ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC190N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.016ohm
Transistor Case Style
TDSON
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate