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IPD068N10N3GATMA1
MOSFET, N-CH, 100V, 90A, TO-252 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $1.430 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$3,575.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD068N10N3GATMA1
Newark Part No.86AK5195
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id90A
Drain Source On State Resistance6800µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for IPD068N10N3GATMA1
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability