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ManufacturerINFINEON
Manufacturer Part NoIRFZ44EPBF
Newark Part No.63J7128
Also Known AsSP001557776
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFZ44EPBF
Newark Part No.63J7128
Also Known AsSP001557776
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id48A
Drain Source On State Resistance0.023ohm
On Resistance Rds(on)0.023ohm
Transistor MountingThrough Hole
Power Dissipation Pd110W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220AB
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
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Product Overview
The IRFZ44EPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
Applications
Power Management, Commercial, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.023ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
48A
On Resistance Rds(on)
0.023ohm
Power Dissipation Pd
110W
Gate Source Threshold Voltage Max
4V
Power Dissipation
110W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate