Print Page
IRFP4768PBF
Power MOSFET, N Channel, 250 V, 93 A, 0.0145 ohm, TO-247AC, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFP4768PBF
Newark Part No.08R4843
Also Known AsSP001571028
Technical Datasheet
6,406 In Stock
Need more?
1670 Delivery in 1-3 Business Days(US stock)
4736 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $7.190 |
| 10+ | $7.160 |
| 25+ | $5.080 |
| 50+ | $4.800 |
| 100+ | $4.530 |
| 250+ | $4.410 |
| 800+ | $4.180 |
Price for:Each
Minimum: 1
Multiple: 1
$7.19
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP4768PBF
Newark Part No.08R4843
Also Known AsSP001571028
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id56A
Drain Source On State Resistance0.0145ohm
On Resistance Rds(on)0.0145ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd520W
Gate Source Threshold Voltage Max5V
Power Dissipation520W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFP4768PBF is a 250V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0145ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
56A
On Resistance Rds(on)
0.0145ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
520W
Power Dissipation
520W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IRFP4768PBF
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability