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IXTH50P10
Power MOSFET, P Channel, 100 V, 50 A, 0.055 ohm, TO-247, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $5.240 |
| 25+ | $5.240 |
| 100+ | $5.240 |
| 250+ | $5.240 |
| 500+ | $5.240 |
| 1000+ | $5.240 |
Price for:Each
Minimum: 1
Multiple: 1
$5.24
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH50P10
Newark Part No.03AH1520
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id50A
On Resistance Rds(on)0.055ohm
Drain Source On State Resistance0.055ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation300W
Power Dissipation Pd300W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated standard power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test equipment applications.
- Low RDS(ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance (< 5nH)- easy to drive and to protect
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space savings
- High power density
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.055ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
300W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
300W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability