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LP0701N3-G
Power MOSFET, P Channel, 16.5 V, 500 mA, 1.3 ohm, TO-92, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.470 |
| 10+ | $1.350 |
| 25+ | $1.350 |
| 50+ | $1.350 |
| 100+ | $1.250 |
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoLP0701N3-G
Newark Part No.53Y4189
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds16.5V
Continuous Drain Current Id500mA
Drain Source On State Resistance1.3ohm
On Resistance Rds(on)1.3ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max700mV
Power Dissipation1W
Power Dissipation Pd1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
16.5V
Drain Source On State Resistance
1.3ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
5V
Power Dissipation
1W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
700mV
Power Dissipation Pd
1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability