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BSS84LT1G
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.055 |
| 50+ | $0.054 |
| 100+ | $0.054 |
| 250+ | $0.054 |
| 500+ | $0.054 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS84LT1G
Newark Part No.98H0511
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130mA
Drain Source On State Resistance10ohm
On Resistance Rds(on)10ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd225mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max2V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS84LT1G is a P-channel Power MOSFET qualified to AEC Q101 and PPAP capable. It is suitable for DC-DC converters and load switching applications.
Applications
Communications & Networking, Power Management, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
225mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
130mA
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-23
Power Dissipation
225mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability