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FDB3632
Power MOSFET, N Channel, 100 V, 80 A, 0.009 ohm, TO-263AB, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.890 |
| 10+ | $2.900 |
| 25+ | $2.750 |
| 50+ | $2.460 |
| 100+ | $2.160 |
| 250+ | $1.970 |
| 500+ | $1.780 |
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$3.89
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB3632
Newark Part No.28H9661
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.009ohm
On Resistance Rds(on)0.009ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd310W
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The FDB3632 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for use in synchronous rectification, battery protection circuit and micro solar inverter.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
310W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.009ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-263AB
Power Dissipation
310W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability