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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDPF15N65
Newark Part No.31Y1382
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id15A
On Resistance Rds(on)0.36ohm
Drain Source On State Resistance0.36ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Power Dissipation Pd38.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FDPF15N65 is a N-channel UniFET high voltage MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- Low gate charge (48.5nC)
- Low Crss (23.6pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.36ohm
Transistor Case Style
TO-220F
Power Dissipation Pd
38.5W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
38.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability