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MUN5215DW1T1G.
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm
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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $0.032 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$96.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5215DW1T1G.
Newark Part No.15AC3685
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R110kohm
Base Emitter Resistor R2-
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min160hFE
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
10kohm
Transistor Case Style
SOT-363
Power Dissipation
385mW
DC Current Gain hFE Min
160hFE
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate