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Product Information
ManufacturerONSEMI
Manufacturer Part NoRFP50N06
Newark Part No.58K9518
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd131W
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max4V
Power Dissipation131W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
- Temperature compensating PSPICE® model
- Peak current vs. pulse width curve
- UIS Rated curve
- 175°C Rated junction temperature
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
131W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
0.022ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
Power Dissipation
131W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for RFP50N06
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability