Print Page
2N6661
Power MOSFET, N Channel, 90 V, 900 mA, 4 ohm, TO-205AF, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N6661
Newark Part No.14R8416
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds90V
Continuous Drain Current Id900mA
Drain Source On State Resistance4ohm
On Resistance Rds(on)3ohm
Transistor MountingThrough Hole
Power Dissipation Pd6.25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleTO-205AF
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N6661 is a 90V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
90V
Drain Source On State Resistance
4ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-205AF
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
900mA
On Resistance Rds(on)
3ohm
Power Dissipation Pd
6.25W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
6.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability