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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Single MOSFETs
                      Print Page

                      IRF630

                      N CHANNEL MOSFET, 200V, 9A, TO-220

                      STMICROELECTRONICS IRF630
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoIRF630
                      Newark Part No.89K1268
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      1 In Stock

                      Need more?

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                      Order before 9pm EST standard shipping
                      Available in quantity shown
                      QuantityPrice
                      1+$1.020
                      10+$1.020
                      100+$0.937
                      500+$0.867
                      1000+$0.860
                      2500+$0.745
                      10000+$0.726
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $1.02
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoIRF630
                      Newark Part No.89K1268
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityN Channel
                      Channel TypeN Channel
                      Continuous Drain Current Id9A
                      Drain Source Voltage Vds200V
                      Drain Source On State Resistance0.4ohm
                      On Resistance Rds(on)0.4ohm
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max3V
                      Transistor MountingThrough Hole
                      Power Dissipation Pd75W
                      Transistor Case StyleTO-220
                      Power Dissipation75W
                      No. of Pins3Pins
                      Operating Temperature Max150°C
                      Qualification-
                      Product Range-
                      MSL-
                      SVHCNo SVHC (15-Jan-2018)

                      Alternatives for IRF630

                      1 Product Found

                      Product Overview

                      The IRF630 is a 200V N-channel Power MOSFET designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

                      • Extremely high dv/dt capability
                      • Very low intrinsic capacitances
                      • Gate charge minimized
                      • 200V Drain to gate voltage
                      • ±20V Gate to source voltage
                      • 62.5°C/W Thermal resistance, junction to ambient

                      Applications

                      Power Management

                      Warnings

                      Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

                      Technical Specifications

                      Transistor Polarity

                      N Channel

                      Continuous Drain Current Id

                      9A

                      Drain Source On State Resistance

                      0.4ohm

                      Rds(on) Test Voltage

                      10V

                      Transistor Mounting

                      Through Hole

                      Transistor Case Style

                      TO-220

                      No. of Pins

                      3Pins

                      Qualification

                      -

                      MSL

                      -

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      200V

                      On Resistance Rds(on)

                      0.4ohm

                      Gate Source Threshold Voltage Max

                      3V

                      Power Dissipation Pd

                      75W

                      Power Dissipation

                      75W

                      Operating Temperature Max

                      150°C

                      Product Range

                      -

                      SVHC

                      No SVHC (15-Jan-2018)

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Product Change Notice EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Y-Ex

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (15-Jan-2018)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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