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10+ | $1.020 |
100+ | $0.937 |
500+ | $0.867 |
1000+ | $0.860 |
2500+ | $0.745 |
10000+ | $0.726 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoIRF630
Newark Part No.89K1268
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id9A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.4ohm
On Resistance Rds(on)0.4ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor MountingThrough Hole
Power Dissipation Pd75W
Transistor Case StyleTO-220
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
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Product Overview
The IRF630 is a 200V N-channel Power MOSFET designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Gate charge minimized
- 200V Drain to gate voltage
- ±20V Gate to source voltage
- 62.5°C/W Thermal resistance, junction to ambient
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
0.4ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Through Hole
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.4ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
75W
Power Dissipation
75W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate