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SCT025H120G3AG
Silicon Carbide MOSFET, Single, N Channel, 55 A, 1.2 kV, 0.037 ohm, H2PAK
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| Quantity | Price |
|---|---|
| 1+ | $22.550 |
| 10+ | $19.860 |
| 25+ | $18.970 |
| 50+ | $18.070 |
| 100+ | $17.180 |
| 250+ | $16.640 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$22.55
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT025H120G3AG
Newark Part No.14AM7980
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.037ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation375W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.037ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
375W
Product Range
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
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