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SCT070HU120G3AG
Silicon Carbide MOSFET, Single, N Channel, 30 A, 1.2 kV, 0.087 ohm, HU3PAK
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Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $15.760 |
| 10+ | $11.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$15.76
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT070HU120G3AG
Newark Part No.12AM9886
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.087ohm
Transistor Case StyleHU3PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation223W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.087ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HU3PAK
Rds(on) Test Voltage
18V
Power Dissipation
223W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate