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TPN2010FNH,L1Q(M
MOSFET, N-CH, 9.9A, TSON-8 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 5000+ | $0.522 |
| 10000+ | $0.479 |
| 20000+ | $0.436 |
| 30000+ | $0.423 |
| 50000+ | $0.414 |
Price for:Each (Supplied on Full Reel)
Minimum: 5000
Multiple: 5000
$2,610.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN2010FNH,L1Q(M
Newark Part No.87AK5825
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id9.9A
Drain Source On State Resistance0.198ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.9A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.198ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Alternatives for TPN2010FNH,L1Q(M
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability