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SI2369BDS-T1-GE3
MOSFET, P-CH, 7.5A, SOT-23-3 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2369BDS-T1-GE3
Newark Part No.87AK5741
Product RangeTrenchFET Gen IV Series
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.208 |
| 6000+ | $0.204 |
| 12000+ | $0.203 |
| 18000+ | $0.202 |
| 30000+ | $0.193 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$624.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2369BDS-T1-GE3
Newark Part No.87AK5741
Product RangeTrenchFET Gen IV Series
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.027ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
3Pins
Product Range
TrenchFET Gen IV Series
SVHC
To Be Advised
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability