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SI4925DDY-T1-GE3.
Dual MOSFET, Dual P Channel, 30 V, 8 A
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5,000 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.584 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,460.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925DDY-T1-GE3.
Newark Part No.26AC3335
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id8A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel2.9mohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel5W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Dual P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
2.9mohm
No. of Pins
8Pins
Power Dissipation P Channel
5W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate