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SIR582DP-T1-RE3
MOSFET, N-CH, 80V, 116A, POWERPAK SO ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSIR582DP-T1-RE3
Newark Part No.86AK6233
Product RangeTrenchFET Gen V Series
Available to Order
Manufacturer Standard Lead Time: 43 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $1.010 |
| 6000+ | $0.987 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$3,030.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR582DP-T1-RE3
Newark Part No.86AK6233
Product RangeTrenchFET Gen V Series
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id116A
Drain Source On State Resistance2800µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation92.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
116A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
92.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
SVHC
Lead (21-Jan-2025)
Alternatives for SIR582DP-T1-RE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability