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CAS120M12BM2
Silicon Carbide MOSFET, Half Bridge, N Channel, 193 A, 1.2 kV, 0.013 ohm, Module
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoCAS120M12BM2
Newark Part No.98Y6007
Technical Datasheet
Transistor PolarityDual N Channel
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id193A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.013ohm
Drain Source On State Resistance0.013ohm
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd925W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation925W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Product Overview
Applications
Medical
Technical Specifications
Transistor Polarity
Dual N Channel
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.013ohm
No. of Pins
-
Rds(on) Test Voltage
20V
Power Dissipation
925W
Product Range
-
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
193A
On Resistance Rds(on)
0.013ohm
Transistor Case Style
Module
Power Dissipation Pd
925W
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Dec-2015)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate