ADRF5301BCCZN-R7

ADRF5301BCCZN-R7 is a SPDT switch manufactured in the silicon process. This incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3V applied to the VDD pin. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible control. Applications include industrial scanner test instrumentation, cellular infrastructure mmWave 5G, military radios, radars, electronic counter measures (ECMs), microwave radios and very small aperture terminals (VSATs).

• 20-terminal land grid array [LGA] package, temperature range from -40°C to +105°C
• Reflective design, low insertion loss is 1.4dB typical
• High isolation is 30dB typical, high input linearity, P0.1dB is 36dBm, input IP3 is 52dBm
• High RF power handling, 28dBm average, 36dBm peak
• Single-supply operation is 3.3V, internal NVG
• RF settling time (0.1dB final RF output) is 50ns

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party