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TP65H035G4WS
Gallium Nitride (GaN) Transistor, 650 V, 46 A, 0.041 ohm, 22 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H035G4WS
Newark Part No.97AK4775
Product RangeSuperGaN Series
Technical Datasheet
420 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $25.480 |
| 10+ | $17.840 |
| 25+ | $17.490 |
| 50+ | $17.150 |
| 100+ | $16.790 |
| 250+ | $16.440 |
Price for:Each
Minimum: 1
Multiple: 1
$25.48
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H035G4WS
Newark Part No.97AK4775
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id46A
Drain Source On State Resistance0.041ohm
Typical Gate Charge22nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
Continuous Drain Current Id
46A
Typical Gate Charge
22nC
Transistor Mounting
Through Hole
Product Range
SuperGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability