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IXFN110N60P3
Bipolar (BJT) Single Transistor, N Channel, 90 A, 600 V, 0.056 ohm, 10 V, 5 V
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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN110N60P3
Newark Part No.03AH0712
Product RangePolar3/ HiPerFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $38.270 |
| 5+ | $35.530 |
| 10+ | $33.170 |
| 25+ | $31.870 |
| 100+ | $30.470 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN110N60P3
Newark Part No.03AH0712
Product RangePolar3/ HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds600V
On Resistance Rds(on)0.056ohm
Drain Source On State Resistance0.056ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.5kW
Power Dissipation1.5kW
Operating Temperature Max150°C
Product RangePolar3/ HiPerFET Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic rectifier. It Is suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- miniBLOC with aluminium nitride isolation
- Low package inductance
- Low RDS(on) and QG
- Easy to mount
- Space savings
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.056ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.5kW
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.056ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.5kW
Product Range
Polar3/ HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability