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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. MOSFET Modules
                      Print Page

                      IXTN210P10T

                      Bipolar (BJT) Single Transistor, P Channel, 210 A, 100 V, 0.0075 ohm, 10 V, 4.5 V

                      IXYS SEMICONDUCTOR IXTN210P10T
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXTN210P10T
                      Newark Part No.71AH4575
                      Product RangeTrenchP Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      108 In Stock

                      Need more?

                      30 Delivery in 1-3 Business Days(US stock)
                      78 Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST Standard Shipping
                      QuantityPrice
                      1+$52.580
                      5+$49.130
                      10+$45.670
                      30+$45.660
                      50+$45.650
                      100+$41.340
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $52.58
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerIXYS SEMICONDUCTOR
                      Manufacturer Part NoIXTN210P10T
                      Newark Part No.71AH4575
                      Product RangeTrenchP Series
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityP Channel
                      Channel TypeP Channel
                      Continuous Drain Current Id210A
                      Drain Source Voltage Vds100V
                      Drain Source On State Resistance0.0075ohm
                      On Resistance Rds(on)0.0075ohm
                      Rds(on) Test Voltage10V
                      Gate Source Threshold Voltage Max4.5V
                      Power Dissipation830W
                      Power Dissipation Pd830W
                      Operating Temperature Max150°C
                      Product RangeTrenchP Series
                      SVHCTo Be Advised

                      Product Overview

                      IXTN210P10T is a TrenchP™ power MOSFET. Suitable for high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.

                      • P-channel enhancement mode
                      • Avalanche rated and fast intrinsic rectifier
                      • International standard package
                      • Low intrinsic gate resistance
                      • miniBLOC with aluminium nitride isolation
                      • Extended FBSOA and low RDS(ON) and QG
                      • Easy to mount, space savings and high power density
                      • 210A continuous drain current Id
                      • 100V drain source voltage Vds, 10V Rds(on) test voltage, 4.5V max gate source threshold voltage
                      • 0.0075ohm drain source on state resistance

                      Technical Specifications

                      Transistor Polarity

                      P Channel

                      Continuous Drain Current Id

                      210A

                      Drain Source On State Resistance

                      0.0075ohm

                      Rds(on) Test Voltage

                      10V

                      Power Dissipation

                      830W

                      Operating Temperature Max

                      150°C

                      SVHC

                      To Be Advised

                      Channel Type

                      P Channel

                      Drain Source Voltage Vds

                      100V

                      On Resistance Rds(on)

                      0.0075ohm

                      Gate Source Threshold Voltage Max

                      4.5V

                      Power Dissipation Pd

                      830W

                      Product Range

                      TrenchP Series

                      Technical Docs (1)

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:Unknown
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:To Be Advised
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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