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FQB55N10TM
Power MOSFET, N Channel, 100 V, 55 mA, 0.026 ohm, TO-263 (D2PAK), Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 800+ | $1.460 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$1,168.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB55N10TM
Newark Part No.34C0409
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id55mA
Drain Source On State Resistance0.026ohm
On Resistance Rds(on)0.021ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd3.75W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation3.75W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
3.75W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
55mA
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.75W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate