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QID4515001
IGBT Module, Dual [Half Bridge], 150 A, 3.5 V, 1.44 kW, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Product Information
ManufacturerPOWEREX
Manufacturer Part NoQID4515001
Newark Part No.79R2564
Technical Datasheet
Transistor PolarityDual NPN
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage3.5V
Collector Emitter Saturation Voltage Vce(on)3.5V
Power Dissipation Pd1.44kW
Power Dissipation1.44kW
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo4.5kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins8Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max4.5kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual NPN
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
3.5V
Power Dissipation Pd
1.44kW
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
8Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
3.5V
Power Dissipation
1.44kW
Collector Emitter Voltage V(br)ceo
4.5kV
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
4.5kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate