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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS138DW-7-F
Newark Part No.25R4429
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel50V
Continuous Drain Current Id200mA
Drain Source Voltage Vds50V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel200mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel3.5ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS138DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for load switch applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching performance
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200mA
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds
50V
Continuous Drain Current Id N Channel
200mA
Drain Source On State Resistance N Channel
3.5ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for BSS138DW-7-F
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate