Print Page
DMG6601LVT-7
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 34 mohm
Image is for illustrative purposes only. Please refer to product description.
453 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.481 |
| 10+ | $0.306 |
| 25+ | $0.264 |
| 50+ | $0.221 |
| 100+ | $0.179 |
| 250+ | $0.163 |
| 500+ | $0.147 |
| 1000+ | $0.127 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.48
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG6601LVT-7
Newark Part No.82Y6568
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id3.8A
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel34mohm
Drain Source On State Resistance P Channel0.034ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel850mW
Power Dissipation P Channel850mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Complementary MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
0.034ohm
No. of Pins
6Pins
Power Dissipation P Channel
850mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
34mohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
850mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Alternatives for DMG6601LVT-7
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability