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DMMT5551S-7-F
Bipolar Transistor Array, Dual NPN, 160 V, 200 mA, 300 mW
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.514 |
| 10+ | $0.328 |
| 25+ | $0.292 |
| 50+ | $0.258 |
| 100+ | $0.222 |
| 250+ | $0.200 |
| 500+ | $0.176 |
| 1000+ | $0.162 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.57
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMMT5551S-7-F
Newark Part No.28AK8445
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN160V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN200mA
Continuous Collector Current PNP-
Power Dissipation NPN300mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN80hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-26
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN300MHz
Transition Frequency PNP-
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
160V
Continuous Collector Current NPN
200mA
Power Dissipation NPN
300mW
DC Current Gain hFE Min NPN
80hFE
Transistor Case Style
SOT-26
Transistor Mounting
Surface Mount
Transition Frequency NPN
300MHz
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability