Print Page
DMN63D8LDW-7
Dual MOSFET, N Channel, 30 V, 30 V, 260 mA, 260 mA, 2.8 ohm
Image is for illustrative purposes only. Please refer to product description.
46,609 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.281 |
| 10+ | $0.169 |
| 25+ | $0.151 |
| 50+ | $0.134 |
| 100+ | $0.116 |
| 250+ | $0.107 |
| 500+ | $0.097 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$1.41
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN63D8LDW-7
Newark Part No.82Y6580
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id260mA
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel260mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel2.8ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel400mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include DC-DC converters, power management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low input capacitance, ESD protected gate
- Fast switching speed, small surface mount package
- Drain-source voltage is 30V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 220mA at TA = +25°C, VGS = 10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 300mW at TA = +25°C
- Static drain-source on-resistance is 2.8ohm max at VGS = 10.0V, ID = 250mA, TA = +25°C
- SOT363 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
260mA
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
260mA
Drain Source On State Resistance N Channel
2.8ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for DMN63D8LDW-7
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability