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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMN4A06GTA
Newark Part No.38K9596
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id7A
On Resistance Rds(on)0.05ohm
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.9W
Gate Source Threshold Voltage Max1V
Power Dissipation3.9W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The ZXMN4A06GTA is a 40V N-channel Enhancement Mode MOSFET designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- AEC-Q101 qualified
- UL94V-0 Flammability rating
Applications
Power Management, Audio, Motor Drive & Control, Defence, Military & Aerospace
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.05ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
7A
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.9W
Power Dissipation
3.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability