Product Information
Product Overview
The VTS3080H is a large area Silicon Photodiode Chip with 30AWG insulated and flexible wires and low capacitance. Silicon photodiode bare chip with 412mm² active area designed for spectral response between 400 and 1100nm. This series of planar, P on N, large area silicon photodiode is characterized for use in the photovoltaic (unbiased) mode. Its excellent speed and broadband sensitivity makes it ideal for detecting light form a variety of sources such as LEDs, IREDs, flash lamps, incandescent lamps and lasers. Improved shunt resistance minimizes amplifier offset and drift in high gain systems. The solderable contact system on this photodiode provides a cost effective design solution for many applications.
- Visible to IR spectral range
- Very large active area
- 1% Linearity over 4 decades of illumination
- Moderate shunt resistance
- Low capacitance
Applications
Industrial, Metering
Technical Specifications
2Pins
925nm
0.2µA
105°C
-
To Be Advised
44A
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-40°C
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-
Technical Docs (1)
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate