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GA10JT12-263
Silicon Carbide MOSFET, Single, N Channel, 10 A, 1.2 kV, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Product Information
ManufacturerGENESIC
Manufacturer Part NoGA10JT12-263
Newark Part No.08X5868
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id10A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Transistor Case StyleTO-263 (D2PAK)
Power Dissipation Pd94W
No. of Pins3Pins
Power Dissipation94W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
Gate Source Threshold Voltage Max
-
Power Dissipation Pd
94W
Power Dissipation
94W
Product Range
-
SVHC
Lead
MOSFET Module Configuration
Single
Continuous Drain Current Id
10A
On Resistance Rds(on)
-
Rds(on) Test Voltage
-
Transistor Case Style
TO-263 (D2PAK)
No. of Pins
3Pins
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate