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AIMW120R060M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.06 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAIMW120R060M1HXKSA1
Newark Part No.52AJ4419
Product RangeCoolSiC Trench
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 23 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | $40.070 |
| 5+ | $37.450 |
| 10+ | $34.830 |
| 25+ | $32.220 |
| 50+ | $29.600 |
| 100+ | $29.500 |
| 480+ | $29.390 |
Price for:Each
Minimum: 1
Multiple: 1
$40.07
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAIMW120R060M1HXKSA1
Newark Part No.52AJ4419
Product RangeCoolSiC Trench
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id36A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.06ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation150W
Power Dissipation Pd150W
Operating Temperature Max175°C
Product RangeCoolSiC Trench
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.06ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation Pd
150W
Product Range
CoolSiC Trench
Channel Type
N Channel
Continuous Drain Current Id
36A
Drain Source On State Resistance
0.06ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
150W
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate